triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information october 19, 2005 1 note: device is early in the characterization process prior to finalizing all electrical specifications. specifications are sub ject to change without notice 13 - 15 ghz 4w power amplifier TGA8659-FL ceramic flange mounted package key features ? frequency range: 13 - 15 ghz ? >25 db nominal gain ? >36 dbm nominal psat ? bias 6 - 7.5v @ 1.3 - 1.6a idq ? package dimensions: 0.33 x 0.70 x 0.12 in 8.4 x 17.8 x 3.0 mm primary applications ? ku-band vsat transmit ? point-to-point radio fixtured measured performance bias conditions: vd = 7v, idq = 1.3a 5 % frequency at 14.5 ghz 25 27 29 31 33 35 37 345678910111213141516 pin (dbm) pout (dbm) bias conditions: vd = 7v, idq = 1.3a 5% -10 -5 0 5 10 15 20 25 30 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) gain (db) the triquint tga8569-fl is a packaged power amplifier delivering more than 4 watts in the vsat band. the power amplifier works over the extended frequency range of 13 to 17 ghz and is designed using triquints proven standard 0.5 um gate phemt production process. the TGA8659-FL provides a nominal gain greater than 25db with excellent input and output vswr. the TGA8659-FL is designed for ku- band vsat transmitters and can also provide high power over a wider frequency band. evaluation boards are available upon request. lead-free and rohs compliant
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information october 19, 2005 2 note: device is early in the characterization process prior to finalizing all electrical specifications. specifications are sub ject to change without notice TGA8659-FL table ii electrical characteristics (ta = 25 o c 5 o c) table i maximum ratings 1/ symbol parameter value notes v + positive supply voltage 8v i + positive supply current (quiescent) 1.7 a 2/ p d power dissipation 13 w p in input continuous wave power 24 dbm t ch operating channel temperature 150 c 3/, 4/ t m mounting temperature (30 seconds) 260 c t stg storage temperature -65 c to 150 c 1/ these values represent the maximum operable values of this device 2/ total current for the entire mmic 3/ these ratings apply to each individual fet 4/ junction operating temperature will directly affect the device mean time to failure (mttf). for maximum life it is recommended that junction temperatures be maintained at the lowest possible levels. parameter units typical drain operating voltage v 7 quiescent current a 1.3 small signal gain db 25 gain flatness (freq = 13.5 - 15 ghz) db/100mhz 0.1 input return loss (linear small signal) db 10 output return loss (linear small signal) db 10 reverse isolation db > 50 cw output power @psat at 14.5ghz dbm 36 toi at 14.5 ghz with pout/tone of 28 dbm dbm 41 power added efficiency@psat % 30 p1db temperature coeff. tc (-40 to +70 c) db/deg c -0.01
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information october 19, 2005 3 note: device is early in the characterization process prior to finalizing all electrical specifications. specifications are sub ject to change without notice measured fixtured data bias conditions: vd = 7v, idq = 1.3a 5 % frequency at 14.5 ghz 25 27 29 31 33 35 37 345678910111213141516 pin (dbm) pout (dbm) bias conditions: vd = 7v, idq = 1.3a 5% -10 -5 0 5 10 15 20 25 30 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) gain (db) TGA8659-FL
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information october 19, 2005 4 note: device is early in the characterization process prior to finalizing all electrical specifications. specifications are sub ject to change without notice measured fixtured data bias conditions: vd = 7v, idq = 1.3a 5% -35 -30 -25 -20 -15 -10 -5 0 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) input return loss (db) -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) output return loss (db) TGA8659-FL
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information october 19, 2005 5 note: device is early in the characterization process prior to finalizing all electrical specifications. specifications are sub ject to change without notice measured fixtured data bias conditions: vd = 7v, idq = 1.3a 5% 20 22 24 26 28 30 32 34 36 38 40 11 12 13 14 15 16 17 18 19 frequency (ghz) p2db (dbm) 10 15 20 25 30 35 40 45 50 55 60 pae@p2db (%) p2db pae 30 33 36 39 42 45 48 10 13 16 19 22 25 28 31 34 fundamental output power per tone (dbm) toi (dbm ) bias conditions: vd = 6v, idq = 1.3a 5% TGA8659-FL @14.5 ghz
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information october 19, 2005 6 note: device is early in the characterization process prior to finalizing all electrical specifications. specifications are sub ject to change without notice packaged dimensional drawing gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA8659-FL ? ; [? [ [? /($':,'7+$1'/(1*7+
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information october 19, 2005 7 note: device is early in the characterization process prior to finalizing all electrical specifications. specifications are sub ject to change without notice bias procedure 1) make sure no rf power is applied to the device before continuing. 2) pinch off device by setting v g to C1.5v. 3) raise v d to 7.0v while monitoring drain current. 4) raise v g until drain current reaches 1.3 a. v g should be between C0.6v and C0.3v. 5) apply rf power. gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. ordering information part package style TGA8659-FL flange, leads bolted down note: pins 6 and 10 are connected together internally TGA8659-FL
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information october 19, 2005 8 note: device is early in the characterization process prior to finalizing all electrical specifications. specifications are sub ject to change without notice TGA8659-FL 1,2,4,7,9 rf in TGA8659-FL 3 10 8 rf out vd 0.01 p f 1 p f 1 p f 0.01 p f 6 vd (optional) 10 : 5 vg 0.01 p f 1 p f 10-30 p f tantalum (external) evaluation board and schematic
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